bcr 42pn oct-23-2000 1 npn/pnp silicon digital transistor array switching circuit, inverter, interface circuit, driver circuit two (galvanic) internal isolated npn/pnp transistors in one package built in bias resistor ( r 1 =22k , r 2 =47k ) vps05604 6 3 1 5 4 2 eha07176 6 54 3 2 1 c1 b2 e2 c2 b1 e1 1 r r 2 r 1 r 2 tr1 tr2 type marking pin configuration package bcr 42pn w9s 1=e1 2=b1 3=c2 4=e2 5=b2 6=c1 sot-363 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 emitter-base voltage v ebo 10 input on voltage v i(on) 30 dc collector current i c 100 ma total power dissipation , t s = 115 c p tot 250 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance junction ambient 1) r thja 275 k/w junction - soldering point r thjs 140 k/w 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bcr 42pn oct-23-2000 2 electrical characteristics at t a =25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 100 a, i b = 0 v (br)ceo 50 - - v collector-base breakdown voltage i c = 10 a, i b = 0 v (br)cbo 50 - - collector cutoff current v cb = 40 v, i e = 0 i cbo - - 100 na emitter cutoff current v eb = 10 v, i c = 0 i ebo - - 227 a dc current gain 1) i c = 5 ma, v ce = 5 v h fe 70 - - - collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma v cesat - - 0.3 v input off voltage i c = 100 a, v ce = 5 v v i(off) 0.5 - 1.2 input on voltage i c = 2 ma, v ce = 0.3 v v i(on) 0.8 - 2.5 input resistor r 1 15 22 29 k resistor ratio r 1 / r 2 0.42 0.47 0.52 - ac characteristics transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 150 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf 1) pulse test: t < 300 s; d < 2%
bcr 42pn oct-23-2000 3 npn type dc current gain h fe = f (i c ) v ce = 5v (common emitter configuration) 10 -1 10 0 10 1 10 2 ma i c 0 10 1 10 2 10 3 10 - h fe collector-emitter saturation voltage v cesat = f ( i c ), h fe = 20 0 0.2 0.4 0.6 v 1 v cesat 0 10 1 10 2 10 ma i c input on voltage v i(on) = f ( i c ) v ce = 0.3v (common emitter configuration) 10 -1 10 0 10 1 10 2 v v i(on) -1 10 0 10 1 10 2 10 ma i c input off voltage v i(off) = f ( i c ) v ce = 5v (common emitter configuration) 0 0.5 1 1.5 v 2.5 v i(off) -3 10 -2 10 -1 10 0 10 1 10 ma i c
bcr 42pn oct-23-2000 4 pnp type collector-emitter saturation voltage v cesat = f ( i c ), h fe = 20 0 0.2 0.4 0.6 v 1 v cesat 0 10 1 10 2 10 ma i c dc current gain h fe = f (i c ) v ce = 5v (common emitter configuration) 10 -1 10 0 10 1 10 2 ma i c 0 10 1 10 2 10 3 10 - h fe input off voltage v i(off) = f ( i c ) v ce = 5v (common emitter configuration) 0 0.5 1 1.5 v 2.5 v i(off) -3 10 -2 10 -1 10 0 10 1 10 ma i c input on voltage v i(on) = f ( i c ) v ce = 0.3v (common emitter configuration) 10 -1 10 0 10 1 10 2 v v i(on) -1 10 0 10 1 10 2 10 ma i c
bcr 42pn oct-23-2000 5 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
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